IPD50P04P413ATMA1
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Infineon Technologies IPD50P04P413ATMA1

Manufacturer No:
IPD50P04P413ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50P04P413ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 50A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD50P04P413ATMA1 IPD50P04P413ATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 50A, 10V 12.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85µA 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 51 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3670 pF @ 25 V 3670 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 58W (Tc) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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