IPD50N06S4L12ATMA1
  • Share:

Infineon Technologies IPD50N06S4L12ATMA1

Manufacturer No:
IPD50N06S4L12ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50N06S4L12ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 50A TO252-3-11
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
433

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD50N06S4L12ATMA1 IPD50N06S4L12ATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 25 V 2890 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FQPF2N70
FQPF2N70
Fairchild Semiconductor
MOSFET N-CH 700V 2A TO220F
H5N5016PL-E
H5N5016PL-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDH055N15A
FDH055N15A
onsemi
MOSFET N-CH 150V 158A TO247-3
STP16NF06L
STP16NF06L
STMicroelectronics
MOSFET N-CH 60V 16A TO220AB
SIDR668DP-T1-RE3
SIDR668DP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET
IXFP22N65X2M
IXFP22N65X2M
IXYS
MOSFET N-CH 650V 22A TO220
STH410N4F7-2AG
STH410N4F7-2AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-2
IRFZ48R
IRFZ48R
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
FQB2N90TM
FQB2N90TM
onsemi
MOSFET N-CH 900V 2.2A D2PAK
IPB34CN10NGATMA1
IPB34CN10NGATMA1
Infineon Technologies
MOSFET N-CH 100V 27A D2PAK
NTD4906NT4G
NTD4906NT4G
onsemi
MOSFET N-CH 30V 10.3A/54A DPAK
NVMFS5C450NLWFAFT3G
NVMFS5C450NLWFAFT3G
onsemi
MOSFET N-CH 40V 27A/110A 5DFN

Related Product By Brand

DD171N14KHPSA1
DD171N14KHPSA1
Infineon Technologies
DIODE MODULE GP 1400V 171A
BB 664 E7902
BB 664 E7902
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD-80
BC850BE6327
BC850BE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
IPBE65R075CFD7AATMA1
IPBE65R075CFD7AATMA1
Infineon Technologies
MOSFET N-CH 650V 32A TO263-7
IRFR3707TRL
IRFR3707TRL
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
TDA5225XUMA1
TDA5225XUMA1
Infineon Technologies
RF RX ASK/FSK 300-320MHZ 28TSSOP
CY9AF111KPMC-G-JNE2
CY9AF111KPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 48LQFP
CY9AF344NAPMC-G-MNE2
CY9AF344NAPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 100LQFP
CY9BF121LPMC-G-MNE2
CY9BF121LPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 64LQFP
CY7C1372DV25-167AXC
CY7C1372DV25-167AXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
AGIGA8005-016ACA
AGIGA8005-016ACA
Infineon Technologies
MODULE NVRAM 16MB 200SODIMM
CY7C057V-15AXI
CY7C057V-15AXI
Infineon Technologies
IC SRAM 1.152MBIT PAR 144TQFP