IPD50N04S309ATMA1
  • Share:

Infineon Technologies IPD50N04S309ATMA1

Manufacturer No:
IPD50N04S309ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD50N04S309ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 50A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.87
670

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD50N04S309ATMA1 IPD50N04S308ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V 7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 28µA 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 25 V 2350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF7205TRPBF
IRF7205TRPBF
Infineon Technologies
MOSFET P-CH 30V 4.6A 8SO
FQP2N80
FQP2N80
Fairchild Semiconductor
MOSFET N-CH 800V 2.4A TO220-3
PJQ5462A_R2_00001
PJQ5462A_R2_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
SI7104DN-T1-GE3
SI7104DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 35A PPAK 1212-8
APT9F100B
APT9F100B
Microchip Technology
MOSFET N-CH 1000V 9A TO247
IPZ60R099C7XKSA1
IPZ60R099C7XKSA1
Infineon Technologies
MOSFET N-CH 600V 22A TO247-4
IXTX8N150L
IXTX8N150L
IXYS
MOSFET N-CH 1500V 8A PLUS247-3
2SK3313(Q)
2SK3313(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12A TO220NIS
NTMFS6B14NT1G
NTMFS6B14NT1G
onsemi
MOSFET N-CH 100V 10A/50A 5DFN
HAT2169H-EL-E
HAT2169H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 40V 50A LFPAK
NTNS3C94NZT5G
NTNS3C94NZT5G
onsemi
MOSFET N-CHANNEL 12V 384MA
QS5U28TR
QS5U28TR
Rohm Semiconductor
MOSFET P-CH 20V 2A TSMT5

Related Product By Brand

SPI11N60CFDHKSA1
SPI11N60CFDHKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO262-3
FS150R12PT4BOSA1
FS150R12PT4BOSA1
Infineon Technologies
IGBT MOD 1200V 200A 680W
6PS04512E43W39693NOSA1
6PS04512E43W39693NOSA1
Infineon Technologies
IGBT MODULE 500V 300A
XMC1403Q048X0128AAXUMA1
XMC1403Q048X0128AAXUMA1
Infineon Technologies
IC MCU 32BIT 128KB FLASH 48VQFN
XC835MT2FGIABFXUMA1
XC835MT2FGIABFXUMA1
Infineon Technologies
IC MCU 8BIT 8KB FLASH DSO24
IRS21531DSTRPBF
IRS21531DSTRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
IR3871MTRPBF
IR3871MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 8A PQFN
CY29940AXC-1T
CY29940AXC-1T
Infineon Technologies
IC CLK BUFFER 1:18 200MHZ 32TQFP
MB90F347ASPFR-GS
MB90F347ASPFR-GS
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY88386PMC-GS-BNDE1
CY88386PMC-GS-BNDE1
Infineon Technologies
IC MICROCOMPUTER 4BIT 80LQFP
CY8C5468AXI-LP042
CY8C5468AXI-LP042
Infineon Technologies
NO WARRANTY
CY7C1380D-167BZC
CY7C1380D-167BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA