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Part Number | IPD50N03S4L06ATMA1 | IPD50N03S2L06ATMA1 |
---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies |
Product Status | Active | Active |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | 30 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V | 6.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 20µA | 2V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 68 nC @ 10 V |
Vgs (Max) | ±16V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 25 V | 1900 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 56W (Tc) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-11 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |