IPD350N06LGBTMA1
  • Share:

Infineon Technologies IPD350N06LGBTMA1

Manufacturer No:
IPD350N06LGBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD350N06LGBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 29A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.05
529

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD350N06LGBTMA1 IPD350N06LGBUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 29A, 10V 35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2V @ 28µA 2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 13 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 30 V 800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDP14AN06LA0
FDP14AN06LA0
Fairchild Semiconductor
MOSFET N-CH 60V 10A/67A TO220-3
IXFB210N20P
IXFB210N20P
IXYS
MOSFET N-CH 200V 210A PLUS264
FDA59N25
FDA59N25
onsemi
MOSFET N-CH 250V 59A TO3PN
SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Vishay Siliconix
MOSFET N-CH 600V 21A TO263
PJD6N10A_L2_00001
PJD6N10A_L2_00001
Panjit International Inc.
100V N-CHANNEL MOSFET
IPI80N04S3-04
IPI80N04S3-04
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFB3407ZPBF
IRFB3407ZPBF
Infineon Technologies
MOSFET N-CH 75V 120A TO220AB
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK1212-8
FQB2N60TM
FQB2N60TM
onsemi
MOSFET N-CH 600V 2.4A D2PAK
IRF7855PBF
IRF7855PBF
Infineon Technologies
MOSFET N-CH 60V 12A 8SO
IRFR3708TRPBF
IRFR3708TRPBF
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
SI4880DY-T1-E3
SI4880DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 13A 8-SOIC

Related Product By Brand

TD60N16SOFHPSA1
TD60N16SOFHPSA1
Infineon Technologies
SCR MODULE 1600V 90A MODULE
SPD04N60C2
SPD04N60C2
Infineon Technologies
N-CHANNEL POWER MOSFET
IPU80R3K3P7AKMA1
IPU80R3K3P7AKMA1
Infineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
TC277TP64F200NDCKXUMA3
TC277TP64F200NDCKXUMA3
Infineon Technologies
IC MCU 32BIT 4MB FLASH 292LFBGA
TDA5100XUMA1
TDA5100XUMA1
Infineon Technologies
RF TX IC ASK 433-435MHZ 16TSSOP
KT130
KT130
Infineon Technologies
THERMISTOR PTC 1K OHM 3% SOT23-3
MB96F326RSBPMC-GSE1
MB96F326RSBPMC-GSE1
Infineon Technologies
IC MCU 16BIT 288KB FLASH 80LQFP
S25FL128SAGBHIT03
S25FL128SAGBHIT03
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY15B128Q-SXE
CY15B128Q-SXE
Infineon Technologies
IC FRAM 128KBIT SPI 40MHZ 8SOIC
S25FL256SDPBHB210
S25FL256SDPBHB210
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY14B512PA-SFXIT
CY14B512PA-SFXIT
Infineon Technologies
IC NVSRAM 512KBIT SPI 16SOIC
S29GL128P90TAIR20
S29GL128P90TAIR20
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP