IPD320N20N3GBTMA1
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Infineon Technologies IPD320N20N3GBTMA1

Manufacturer No:
IPD320N20N3GBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD320N20N3GBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 34A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD320N20N3GBTMA1 IPD320N20N3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V 32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V 2350 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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