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| Part Number | IPD30N06S2L13ATMA1 | IPD30N06S2L13ATMA4 | IPD50N06S2L13ATMA1 | IPD30N06S2L23ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Discontinued at Digi-Key | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | 30A (Tc) | 50A (Tc) | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V | 13mOhm @ 30A, 10V | 12.7mOhm @ 34A, 10V | 23mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 80µA | 2V @ 80µA | 2V @ 80µA | 2V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | 69 nC @ 10 V | 69 nC @ 10 V | 42 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 1800 pF @ 25 V | 1800 pF @ 25 V | 1091 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 136W (Tc) | 136W (Tc) | 136W (Tc) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
