IPD26N06S2L35ATMA1
  • Share:

Infineon Technologies IPD26N06S2L35ATMA1

Manufacturer No:
IPD26N06S2L35ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD26N06S2L35ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 30A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:621 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
33

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD26N06S2L35ATMA1 IPD26N06S2L35ATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 13A, 10V 35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 26µA 2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 621 pF @ 25 V 621 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SSN1N45BTA
SSN1N45BTA
onsemi
MOSFET N-CH 450V 500MA TO92-3
IRF840APBF
IRF840APBF
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
TBB1002BMTL-E
TBB1002BMTL-E
Renesas Electronics America Inc
RF N-CHANNEL MOSFET
IRF640STRRPBF
IRF640STRRPBF
Vishay Siliconix
MOSFET N-CH 200V 18A TO263
FQB30N06LTM
FQB30N06LTM
onsemi
MOSFET N-CH 60V 32A D2PAK
IPZ65R019C7XKSA1
IPZ65R019C7XKSA1
Infineon Technologies
MOSFET N-CH 650V 75A TO247-4
STW20NM60FD
STW20NM60FD
STMicroelectronics
MOSFET N-CH 600V 20A TO247-3
DMN2024UFDF-13
DMN2024UFDF-13
Diodes Incorporated
MOSFET N-CH 20V 7.1A 6UDFN
IRFR214
IRFR214
Vishay Siliconix
MOSFET N-CH 250V 2.2A DPAK
IRLML2502GTRPBF
IRLML2502GTRPBF
Infineon Technologies
MOSFET N-CH 20V 4.2A SOT23
AUIRLL2705
AUIRLL2705
Infineon Technologies
MOSFET N-CH 55V 5.2A SOT223
PSMN9R5-100XS,127
PSMN9R5-100XS,127
NXP USA Inc.
MOSFET N-CH 100V 44.2A TO220F

Related Product By Brand

BAT60BE6327HTSA1
BAT60BE6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 10V 3A SOD323-2
IRFR48ZPBF
IRFR48ZPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IR3536MGB01TRP
IR3536MGB01TRP
Infineon Technologies
IC REG CTRLR DDR 2OUT 48VQFN
KP219N3621XTMA1
KP219N3621XTMA1
Infineon Technologies
PRESSURE SENSOR IC'S
CY7B994V-5AXIT
CY7B994V-5AXIT
Infineon Technologies
IC CLK BUFF 18OUT 100MHZ 100LQFP
CY8CTMA616AE-13T
CY8CTMA616AE-13T
Infineon Technologies
IC TRUETOUCH CAPSENSE 100TQFP
CY7C60400-48LTXC
CY7C60400-48LTXC
Infineon Technologies
IC MCU 48MHZ ENCORE 48QFN
MB89697BPFM-G-292E1
MB89697BPFM-G-292E1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB96F623ABPMC-GSAE1
MB96F623ABPMC-GSAE1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
CY62137VLL-70ZSXE
CY62137VLL-70ZSXE
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
CY7C0832AV-167AXC
CY7C0832AV-167AXC
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 120TQFP
S34ML01G200TFV000
S34ML01G200TFV000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I