IPD25DP06LMATMA1
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Infineon Technologies IPD25DP06LMATMA1

Manufacturer No:
IPD25DP06LMATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD25DP06LMATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 6.5A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD25DP06LMATMA1 IPD25DP06NMATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2V @ 270µA 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V 10.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V 420 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 28W (Tc) 28W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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