Infineon Technologies-IPD230N06LG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2V @ 49µA
Gate Charge (Qg) (Max) @ Vgs:	42 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1500 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Infineon Technologies IPD230N06LG