IPD19DP10NMATMA1
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Infineon Technologies IPD19DP10NMATMA1

Manufacturer No:
IPD19DP10NMATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD19DP10NMATMA1 Datasheet
ECAD Model:
-
Description:
TRENCH >=100V PG-TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta), 13.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:186mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$1.72
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Similar Products

Part Number IPD19DP10NMATMA1 IPD11DP10NMATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta), 13.7A (Tc) 3.4A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 186mOhm @ 12A, 10V 111mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 1.04mA 4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V 3200 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 83W (Tc) 3W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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