IPD180N10N3GBTMA1
  • Share:

Infineon Technologies IPD180N10N3GBTMA1

Manufacturer No:
IPD180N10N3GBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD180N10N3GBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 43A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD180N10N3GBTMA1 IPD180N10N3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 1800 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

TSM024NA04LCR RLG
TSM024NA04LCR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 170A 8PDFN
FQD6N50CTM
FQD6N50CTM
onsemi
MOSFET N-CH 500V 4.5A DPAK
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 3.1A SOT23-3
STP33N60DM6
STP33N60DM6
STMicroelectronics
MOSFET N-CH 600V 25A TO220
FDD5N50TF
FDD5N50TF
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
TPC8134,LQ(S
TPC8134,LQ(S
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 5A 8SOP
NTD14N03RT4
NTD14N03RT4
onsemi
MOSFET N-CH 25V 14A DPAK
IRFZ34NSTRRPBF
IRFZ34NSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 29A D2PAK
IRL3303STRRPBF
IRL3303STRRPBF
Infineon Technologies
MOSFET N-CH 30V 38A D2PAK
IXTH14N80
IXTH14N80
IXYS
MOSFET N-CH 800V 14A TO247
TSM2N7000KCT B0G
TSM2N7000KCT B0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 300MA TO92
BUK653R2-55C,127
BUK653R2-55C,127
NXP USA Inc.
MOSFET N-CH 55V 120A TO220AB

Related Product By Brand

BCX5416H6327XTSA1
BCX5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT89
IPA50R299CPXKSA1079
IPA50R299CPXKSA1079
Infineon Technologies
IPA50R299 - 500V COOLMOS N-CHANN
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IPA65R310CFDXKSA2
IPA65R310CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 11.4A TO220
IPB80N06S2L-H5
IPB80N06S2L-H5
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
FP150R07N3E4B11BOSA1
FP150R07N3E4B11BOSA1
Infineon Technologies
IGBT MOD 650V 150A 430W
IR2170
IR2170
Infineon Technologies
IC CURRENT SENSE 600V 1MA 8-DIP
ICE1QS01
ICE1QS01
Infineon Technologies
IC PFC CTRLR 8DIP
MB90025FPMT-GS-230E1
MB90025FPMT-GS-230E1
Infineon Technologies
IC MCU 120LQFP
MB90349CASPFV-GS-145E1
MB90349CASPFV-GS-145E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB95F478KPMC1-G-SNE2
MB95F478KPMC1-G-SNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 64LQFP
CY15B108QN-40SXI
CY15B108QN-40SXI
Infineon Technologies
IC FRAM 8MBIT SPI 40MHZ 8SOIC