IPD15N06S2L64ATMA2
  • Share:

Infineon Technologies IPD15N06S2L64ATMA2

Manufacturer No:
IPD15N06S2L64ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD15N06S2L64ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 19A TO252-31
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:354 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.03
285

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD15N06S2L64ATMA2 IPD15N06S2L64ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 13A, 10V 64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 354 pF @ 25 V 354 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 47W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IMZ120R350M1HXKSA1
IMZ120R350M1HXKSA1
Infineon Technologies
SICFET N-CH 1.2KV 4.7A TO247-4
ZVN4306GTA
ZVN4306GTA
Diodes Incorporated
MOSFET N-CH 60V 2.1A SOT223
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
IMBG120R220M1HXTMA1
IMBG120R220M1HXTMA1
Infineon Technologies
SICFET N-CH 1.2KV 13A TO263
PMFPB6545UP,115
PMFPB6545UP,115
NXP USA Inc.
MOSFET P-CH 20V 3.5A DFN2020-6
IRF3515STRL
IRF3515STRL
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
BSC048N025S G
BSC048N025S G
Infineon Technologies
MOSFET N-CH 25V 19A/89A TDSON
STD5NK52ZD
STD5NK52ZD
STMicroelectronics
MOSFET N-CH 520V 4.4A DPAK
STW160N75F3
STW160N75F3
STMicroelectronics
MOSFET N-CH 75V 120A TO247-3
SI5443DC-T1-GE3
SI5443DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 3.6A 1206-8
FK8V03020L
FK8V03020L
Panasonic Electronic Components
MOSFET N CH 33V 14A WMINI8
RQ3E100ATTB
RQ3E100ATTB
Rohm Semiconductor
MOSFET P-CH 30V 10A/31A 8HSMT

Related Product By Brand

IRDC3899
IRDC3899
Infineon Technologies
BOARD EVAL SUPIRBUCK IR3899
BA 892 E6433
BA 892 E6433
Infineon Technologies
RF DIODE STANDARD 35V SCD80
DD540N22KHPSA2
DD540N22KHPSA2
Infineon Technologies
DIODE MODULE GP 2200V 540A
D2200N24TVFXPSA1
D2200N24TVFXPSA1
Infineon Technologies
DIODE GEN PURP 2.4KV 2200A
IRF3709ZCSTRR
IRF3709ZCSTRR
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
IHW40N135R5XKSA1
IHW40N135R5XKSA1
Infineon Technologies
HOME APPLIANCES 14
AUIRS2113STR
AUIRS2113STR
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16SOIC
CY2CC910OXI-1T
CY2CC910OXI-1T
Infineon Technologies
IC CLK BUFFER 1:10 650MHZ 20SSOP
MB90F897ZPMT-G-T
MB90F897ZPMT-G-T
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
CY91F594BSPMC-GSE1
CY91F594BSPMC-GSE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 208LQFP
MB90F543GSPF-GS-9003
MB90F543GSPF-GS-9003
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
S29GL01GS10DHSS10
S29GL01GS10DHSS10
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA