IPD135N03LGATMA1
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Infineon Technologies IPD135N03LGATMA1

Manufacturer No:
IPD135N03LGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD135N03LGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD135N03LGATMA1 IPD135N03LGBTMA1   IPD105N03LGATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) - 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 30A, 10V - 10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA - 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V - 14 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 15 V - 1500 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 31W (Tc) - 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3 - PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

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