IPD105N03LGATMA1
  • Share:

Infineon Technologies IPD105N03LGATMA1

Manufacturer No:
IPD105N03LGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD105N03LGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 35A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD105N03LGATMA1 IPD135N03LGATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V 13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V 1000 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPP030N10N3GXKSA1
IPP030N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3
BUK661R8-30C,118
BUK661R8-30C,118
NXP USA Inc.
MOSFET N-CH 30V 120A D2PAK
BSC037N08NS5ATMA1
BSC037N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
FDMC8010DC
FDMC8010DC
onsemi
MOSFET N-CH 30V 37A 8PQFN
PMN50UPE,115
PMN50UPE,115
NXP USA Inc.
MOSFET P-CH 20V 3.6A 6TSOP
IRL640STRRPBF
IRL640STRRPBF
Vishay Siliconix
MOSFET N-CH 200V 17A D2PAK
TK13A50DA(STA4,Q,M
TK13A50DA(STA4,Q,M
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12.5A TO220SIS
BSP123L6327HTSA1
BSP123L6327HTSA1
Infineon Technologies
MOSFET N-CH 100V 370MA SOT223-4
NMSD200B01-7
NMSD200B01-7
Diodes Incorporated
MOSFET N-CH 60V 200MA SOT363
APT8024LVRG
APT8024LVRG
Microsemi Corporation
MOSFET N-CH 800V 33A TO264
FDD5N50UTF_WS
FDD5N50UTF_WS
onsemi
MOSFET N-CH 500V 3A DPAK
SI5415EDU-T1-GE3
SI5415EDU-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 25A PPAK

Related Product By Brand

SDT10S30
SDT10S30
Infineon Technologies
DIODE SCHOTTKY 300V 10A TO220-2
D405N26EXPSA1
D405N26EXPSA1
Infineon Technologies
RECTIFIER DIODE DISC
BCR 158 B6327
BCR 158 B6327
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
XMC1201T038F0064ABXUMA1
XMC1201T038F0064ABXUMA1
Infineon Technologies
IC MCU 32BIT 64KB FLASH 38TSSOP
SAF-XC878CM-16FFI 3V3 AA
SAF-XC878CM-16FFI 3V3 AA
Infineon Technologies
IC MCU 8BIT 64KB FLASH 64LQFP
IR2184STRPBF
IR2184STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
PVI5050NPBF
PVI5050NPBF
Infineon Technologies
OPTOISO 4KV PHOTOVOLTAIC 8-DIP
MB90922NCSPMC-GS-200E1
MB90922NCSPMC-GS-200E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
CY7C1011DV33-10BVXIT
CY7C1011DV33-10BVXIT
Infineon Technologies
IC SRAM 2MBIT PARALLEL 48VFBGA
CY7C1041G30-10BVXI
CY7C1041G30-10BVXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
CY7C1354CV25-166AXCT
CY7C1354CV25-166AXCT
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP
CY7C1512V18-200BZI
CY7C1512V18-200BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA