IPD100N06S403ATMA1
  • Share:

Infineon Technologies IPD100N06S403ATMA1

Manufacturer No:
IPD100N06S403ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD100N06S403ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A TO252-3-11
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
531

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD100N06S403ATMA1 IPD100N06S403ATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V 128 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10400 pF @ 25 V 10400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXFT170N25X3HV
IXFT170N25X3HV
IXYS
MOSFET N-CH 250V 170A TO268HV
IRFR9214TRPBF
IRFR9214TRPBF
Vishay Siliconix
MOSFET P-CH 250V 2.7A DPAK
SSM3J145TU,LXHF
SSM3J145TU,LXHF
Toshiba Semiconductor and Storage
SMOS P-CH VDSS:-20V VGSS:-8/+6V
VN2210N3-G
VN2210N3-G
Microchip Technology
MOSFET N-CH 100V 1.2A TO92-3
TK32E12N1,S1X
TK32E12N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 120V 60A TO-220
DMTH4014LPSWQ-13
DMTH4014LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
TK6A45DA(STA4,Q,M)
TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 5.5A TO220SIS
IPI200N25N3GAKSA1
IPI200N25N3GAKSA1
Infineon Technologies
MOSFET N-CH 250V 64A TO262-3
APT80M60J
APT80M60J
Microchip Technology
MOSFET N-CH 600V 84A ISOTOP
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NDT02N60ZT3G
NDT02N60ZT3G
onsemi
MOSFET N-CH 600V 300MA SOT223
IGLD60R070D1AUMA1
IGLD60R070D1AUMA1
Infineon Technologies
GANFET N-CH 600V 15A LSON-8

Related Product By Brand

D2200N24TVFPRXPSA1
D2200N24TVFPRXPSA1
Infineon Technologies
DIODE GEN PURP 2.4KV 2200A
IPT60R040S7XTMA1
IPT60R040S7XTMA1
Infineon Technologies
MOSFET N-CH 600V 13A 8HSOF
IPB051NE8NGATMA1
IPB051NE8NGATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IRF7748L1TRPBF
IRF7748L1TRPBF
Infineon Technologies
MOSFET N-CH 60V 28A DIRECTFET
IPW90R1K0C3FKSA1
IPW90R1K0C3FKSA1
Infineon Technologies
IPW90R1 - 900V COOLMOS N-CHANNEL
FF300R12KS4HOSA1
FF300R12KS4HOSA1
Infineon Technologies
IGBT MOD 1200V 370A 1950W
SAB-C161O-L25M
SAB-C161O-L25M
Infineon Technologies
SAB-C161O-L25M HA - LEGACY 16-BI
MB90022PF-GS-158-BND
MB90022PF-GS-158-BND
Infineon Technologies
IC MCU 16BIT 100QFP
MB90F022CPF-GS-9056
MB90F022CPF-GS-9056
Infineon Technologies
IC MCU MICOM FLASH 100QFP
CY8CMBR2044-24LKXIT
CY8CMBR2044-24LKXIT
Infineon Technologies
IC MCU CAPSENSE 16-QFN
S25FL256SAGBHA203
S25FL256SAGBHA203
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY7C1325G-100AXIT
CY7C1325G-100AXIT
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP