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| Part Number | IPD100N04S4L02ATMA1 | IPD100N04S402ATMA1 | 
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | 
| Product Status | Active | Active | 
| FET Type | - | N-Channel | 
| Technology | - | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | - | 40 V | 
| Current - Continuous Drain (Id) @ 25°C | - | 100A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | 
| Rds On (Max) @ Id, Vgs | - | 2mOhm @ 100A, 10V | 
| Vgs(th) (Max) @ Id | - | 4V @ 95µA | 
| Gate Charge (Qg) (Max) @ Vgs | - | 118 nC @ 10 V | 
| Vgs (Max) | - | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | - | 9430 pF @ 25 V | 
| FET Feature | - | - | 
| Power Dissipation (Max) | - | 150W (Tc) | 
| Operating Temperature | - | -55°C ~ 175°C (TJ) | 
| Mounting Type | - | Surface Mount | 
| Supplier Device Package | - | PG-TO252-3-313 | 
| Package / Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |