IPD09N03LB G
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Infineon Technologies IPD09N03LB G

Manufacturer No:
IPD09N03LB G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD09N03LB G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD09N03LB G IPD03N03LB G   IPD04N03LB G   IPD05N03LB G   IPD06N03LB G   IPD09N03LA G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 90A (Tc) 50A (Tc) 90A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 50A, 10V 3.3mOhm @ 60A, 10V 4.1mOhm @ 50A, 10V 4.8mOhm @ 60A, 10V 6.1mOhm @ 50A, 10V 8.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 70µA 2V @ 70µA 2V @ 40µA 2V @ 40µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 40 nC @ 5 V 40 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V 5200 pF @ 15 V 5200 pF @ 15 V 3200 pF @ 15 V 2800 pF @ 15 V 1642 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 58W (Tc) 115W (Tc) 115W (Tc) 94W (Tc) 83W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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