IPD09N03LA G
  • Share:

Infineon Technologies IPD09N03LA G

Manufacturer No:
IPD09N03LA G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD09N03LA G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 50A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1642 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
135

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD09N03LA G IPD09N03LB G   IPD03N03LA G   IPD04N03LA G   IPD05N03LA G   IPD06N03LA G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 90A (Tc) 50A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 30A, 10V 9.1mOhm @ 50A, 10V 3.2mOhm @ 60A, 10V 3.8mOhm @ 50A, 10V 5.1mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA 2V @ 70µA 2V @ 80µA 2V @ 50µA 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 13 nC @ 5 V 41 nC @ 5 V 41 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1642 pF @ 15 V 1600 pF @ 15 V 5200 pF @ 15 V 5199 pF @ 15 V 3110 pF @ 15 V 2653 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 63W (Tc) 58W (Tc) 115W (Tc) 115W (Tc) 94W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SPP06N80C3XKSA1
SPP06N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 6A TO220-3
IPP020N06NAKSA1
IPP020N06NAKSA1
Infineon Technologies
MOSFET N-CH 60V 29A/120A TO220-3
NVHL040N65S3F
NVHL040N65S3F
onsemi
MOSFET N-CH 650V 65A TO247-3
NVMFS5C420NLWFT1G
NVMFS5C420NLWFT1G
onsemi
POWER MOSFET, SINGLE, N-CHANNEL,
TK18A50D(STA4,Q,M)
TK18A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 18A TO220SIS
IRFI4410ZGPBF
IRFI4410ZGPBF
Infineon Technologies
MOSFET N-CH 100V 43A TO220AB FP
BUK9620-55A,118
BUK9620-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 54A D2PAK
SUD40N04-10A-E3
SUD40N04-10A-E3
Vishay Siliconix
MOSFET N-CH 40V 40A TO252
RJL5014DPK-00#T0
RJL5014DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 500V 19A TO3P
SI1414DH-T1-GE3
SI1414DH-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 4A SOT-363
2N7002-13-F
2N7002-13-F
Diodes Incorporated
DIODE
RSR020N06HZGTL
RSR020N06HZGTL
Rohm Semiconductor
MOSFET N-CH 60V 2A TSMT3

Related Product By Brand

ESD119B1W01005E6327XTSA1
ESD119B1W01005E6327XTSA1
Infineon Technologies
TVS DIODE 5.5VWM 14VC WLL-2-2
IDW40E65D1FKSA1
IDW40E65D1FKSA1
Infineon Technologies
DIODE GEN PURP 650V 80A TO247-3
IPA50R800CEXKSA2
IPA50R800CEXKSA2
Infineon Technologies
MOSFET N-CH 500V 4.1A TO220
IRL7486MTRPBF
IRL7486MTRPBF
Infineon Technologies
MOSFET N-CH 40V 209A DIRECTFET
IPD30N08S222ATMA1
IPD30N08S222ATMA1
Infineon Technologies
MOSFET N-CH 75V 30A TO252-3
IRF7807PBF
IRF7807PBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
IRFH5020TR2PBF
IRFH5020TR2PBF
Infineon Technologies
MOSFET N-CH 200V 5.1A 8PQFN
IPI50R299CPXKSA1
IPI50R299CPXKSA1
Infineon Technologies
MOSFET N-CH 500V 12A TO262-3
TLE4264GHTSA1
TLE4264GHTSA1
Infineon Technologies
IC REG LINEAR 5V 100MA SOT223-4
MB90F058PF-G-NNE1
MB90F058PF-G-NNE1
Infineon Technologies
IC MCU FLASH MICOM-0.18 100QFP
CY7C68300B-56LFXC
CY7C68300B-56LFXC
Infineon Technologies
IC USB 2.0 BRIDGE BULK 56VQFN
CY7C1020BN-12VXCT
CY7C1020BN-12VXCT
Infineon Technologies
IC SRAM 512KBIT PARALLEL 44SOJ