IPD082N10N3GATMA1
  • Share:

Infineon Technologies IPD082N10N3GATMA1

Manufacturer No:
IPD082N10N3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD082N10N3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 80A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.51
337

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD082N10N3GATMA1 IPD082N10N3GBTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 73A, 10V 8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75µA 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V 3980 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

VN2222LL-G
VN2222LL-G
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
RM3407
RM3407
Rectron USA
MOSFET P-CHANNEL 30V 4.3A SOT23
SI2304BDS-T1-BE3
SI2304BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
RM24N200TI
RM24N200TI
Rectron USA
MOSFET N-CHANNEL 220V 24A TO220F
IXTH1N170DHV
IXTH1N170DHV
IXYS
MOSFET N-CH 1700V 1A TO247HV
PMPB10ENZ
PMPB10ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 10A DFN2020MD-6
NVMFS5C680NLWFT1G
NVMFS5C680NLWFT1G
onsemi
MOSFET N-CH 60V 8.1A/21A 5DFN
AOD2210
AOD2210
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 200V 3A/18A TO252
SIHF840LCS-GE3
SIHF840LCS-GE3
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
BSB014N04LX3GXUMA1
BSB014N04LX3GXUMA1
Infineon Technologies
MOSFET N-CH 40V 36A/180A 2WDSON
IXTT12N140
IXTT12N140
IXYS
MOSFET N-CH 1400V 12A TO268
STD22NF06AG
STD22NF06AG
STMicroelectronics
MOSFET N-CH 60V 23A DPAK

Related Product By Brand

ESD130B1W0201E6327XTSA1
ESD130B1W0201E6327XTSA1
Infineon Technologies
TVS DIODE 5.5VWM 18.5VC WLL-2-1
BBY5305WE6327
BBY5305WE6327
Infineon Technologies
VARIABLE CAPACITANCE DIODE
BFP420FH6327XTSA1
BFP420FH6327XTSA1
Infineon Technologies
RF TRANS NPN 5.5V 25GHZ 4TSFP
IRFS3006-7PPBF
IRFS3006-7PPBF
Infineon Technologies
MOSFET N-CH 60V 240A D2PAK
TDA5210T
TDA5210T
Infineon Technologies
RF RX ASK/FSK 810-870MHZ 28TSSOP
MB91F492PMC-GE1
MB91F492PMC-GE1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 64LQFP
MB90025FPMT-GS-228E1
MB90025FPMT-GS-228E1
Infineon Technologies
IC MCU 120LQFP
MB96F387YWBPMC-GE2
MB96F387YWBPMC-GE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
CY7C1480V33-167BZI
CY7C1480V33-167BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S29GL128P10TAI013
S29GL128P10TAI013
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP
IS29GL01GS-11DHB02
IS29GL01GS-11DHB02
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CYW20732A0KML2G
CYW20732A0KML2G
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 32VFQFN