IPD06P005NATMA1
  • Share:

Infineon Technologies IPD06P005NATMA1

Manufacturer No:
IPD06P005NATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD06P005NATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 6.5A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:10.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
34

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD06P005NATMA1 IPD06P007NATMA1   IPD06P002NATMA1   IPD06P003NATMA1   IPD06P004NATMA1   IPD06P005LATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 4.3A (Tc) 35A (Tc) 22A (Tc) 16.4A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V 400mOhm @ 4.3A, 10V 38mOhm @ 35A, 10V 65mOhm @ 22A, 10V 90mOhm @ 16.4A, 10V 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA 4V @ 166µA 4V @ 1.7mA 4V @ 1.04mA 4V @ 710µA 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V 6.7 nC @ 10 V 63 nC @ 10 V 39 nC @ 10 V 27 nC @ 10 V 13.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V 260 pF @ 30 V 2500 pF @ 30 V 1600 pF @ 30 V 1100 pF @ 30 V 420 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 28W (Tc) 19W (Tc) 125W (Tc) 83W (Tc) 63W (Tc) 28W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMS86250
FDMS86250
onsemi
MOSFET N-CH 150V 6.7A/20A 8PQFN
TPN7R504PL,LQ
TPN7R504PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 38A 8TSON
SUM90330E-GE3
SUM90330E-GE3
Vishay Siliconix
MOSFET N-CH 200V 35.1A TO263
PSMN1R2-55SLH
PSMN1R2-55SLH
Nexperia USA Inc.
N-CHANNEL 55 V, 1.03 MOHM, 330 A
DMT10H025LSS-13
DMT10H025LSS-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V SO-8 T&R
IPA60R299CPXKSA1
IPA60R299CPXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO220-FP
IRF3515S
IRF3515S
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
IPB09N03LAT
IPB09N03LAT
Infineon Technologies
MOSFET N-CH 25V 50A TO263-3
NTD4813NT4G
NTD4813NT4G
onsemi
MOSFET N-CH 30V 7.6A/40A DPAK
IRF3515STRLPBF
IRF3515STRLPBF
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
IXFE180N20
IXFE180N20
IXYS
MOSFET N-CH 200V 158A SOT227B
SI4320DY-T1-E3
SI4320DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 17A 8SO

Related Product By Brand

IPB80N04S303ATMA1
IPB80N04S303ATMA1
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
IPB019N08N5ATMA1
IPB019N08N5ATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
IRF630NSTRRPBF
IRF630NSTRRPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A D2PAK
IR4426
IR4426
Infineon Technologies
IC GATE DRVR LOW-SIDE 8DIP
BTS3160DNT
BTS3160DNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLE4274 V50
TLE4274 V50
Infineon Technologies
IC REG LINEAR 5V 400MA TO220-3
MB90F543PF-G
MB90F543PF-G
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
MB9BF524KPMC-G-JNE2
MB9BF524KPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 48LQFP
MB96F378HSBPMC-GS-JAK5E2
MB96F378HSBPMC-GS-JAK5E2
Infineon Technologies
IC MCU 16BIT 576KB FLASH 144LQFP
S25FL164K0XMFA001
S25FL164K0XMFA001
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 16SOIC
S34MS01G200TFV003
S34MS01G200TFV003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I
S34MS08G201BHA003
S34MS08G201BHA003
Infineon Technologies
IC FLASH 8GBIT PARALLEL 63BGA