IPD06P005LATMA1
  • Share:

Infineon Technologies IPD06P005LATMA1

Manufacturer No:
IPD06P005LATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPD06P005LATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 6.5A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD06P005LATMA1 IPD06P005NATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2V @ 270µA 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V 10.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V 420 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 28W (Tc) 28W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SIRA10DP-T1-GE3
SIRA10DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
FDS6676
FDS6676
Fairchild Semiconductor
SMALL SIGNAL N-CHANNEL MOSFET
HUFA75343P3
HUFA75343P3
Fairchild Semiconductor
MOSFET N-CH 55V 75A TO220-3
IXTH30N60L2
IXTH30N60L2
IXYS
MOSFET N-CH 600V 30A TO247
FDD4141
FDD4141
onsemi
MOSFET P-CH 40V 10.8A/50A DPAK
DMP65H11D0HSS-13
DMP65H11D0HSS-13
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
AOT600A70L
AOT600A70L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 8.5A TO220
IRF740STRRPBF
IRF740STRRPBF
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
FDP7030BL
FDP7030BL
onsemi
MOSFET N-CH 30V 60A TO220-3
SI5433BDC-T1-E3
SI5433BDC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 4.8A 1206-8
AUIRFSL4010-306
AUIRFSL4010-306
Infineon Technologies
MOSFET N-CH 100V 180A TO262
RSS110N03TB
RSS110N03TB
Rohm Semiconductor
MOSFET N-CH 30V 11A 8SOP

Related Product By Brand

AUIR3242BOARDUNIDIRTOBO1
AUIR3242BOARDUNIDIRTOBO1
Infineon Technologies
AUIR3242S BOARD UNIDIR
BBY5806WE6327
BBY5806WE6327
Infineon Technologies
VARIABLE CAPACITANCE DIODE
TZ240N34KOFHPSA1
TZ240N34KOFHPSA1
Infineon Technologies
SCR MODULE 3.4KV 700A MODULE
IRF6797MTRPBF
IRF6797MTRPBF
Infineon Technologies
IRF6797 - 12V-300V N-CHANNEL POW
IRF2807ZSTRLPBF
IRF2807ZSTRLPBF
Infineon Technologies
MOSFET N-CH 75V 75A D2PAK
IPB60R180C7ATMA1
IPB60R180C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 13A TO263-3
XMC13S2Q024X0016ABXUMA1
XMC13S2Q024X0016ABXUMA1
Infineon Technologies
XMC13S2 - 32-BIT INDUSTRIAL MICR
PVT322AS-TPBF
PVT322AS-TPBF
Infineon Technologies
SSR RELAY SPST-NO 170MA 0-250V
CY7B991V-5JXC
CY7B991V-5JXC
Infineon Technologies
IC CLK BUFFER 8:8 80MHZ 32PLCC
MB90F352SPFM-GSE1
MB90F352SPFM-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 64QFP
CY8C4248LQI-BL453T
CY8C4248LQI-BL453T
Infineon Technologies
IC MCU 32BIT 256KB FLASH 56QFN
CY7C2665KV18-450BZXI
CY7C2665KV18-450BZXI
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA