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| Part Number | IPD06P002NATMA1 | IPD06P003NATMA1 | IPD06P004NATMA1 | IPD06P005NATMA1 | IPD06P007NATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Discontinued at Digi-Key | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | 22A (Tc) | 16.4A (Tc) | 6.5A (Tc) | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 35A, 10V | 65mOhm @ 22A, 10V | 90mOhm @ 16.4A, 10V | 250mOhm @ 6.5A, 10V | 400mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA | 4V @ 1.04mA | 4V @ 710µA | 4V @ 270µA | 4V @ 166µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 39 nC @ 10 V | 27 nC @ 10 V | 10.6 nC @ 10 V | 6.7 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 30 V | 1600 pF @ 30 V | 1100 pF @ 30 V | 420 pF @ 30 V | 260 pF @ 30 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 125W (Tc) | 83W (Tc) | 63W (Tc) | 28W (Tc) | 19W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
