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| Part Number | IPD050N03LGATMA1 | IPD090N03LGATMA1 | IPD060N03LGATMA1 | IPD050N03LGBTMA1 | IPD040N03LGATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Not For New Designs | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 40A (Tc) | 50A (Tc) | 50A (Tc) | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V | 9mOhm @ 30A, 10V | 6mOhm @ 30A, 10V | 5mOhm @ 30A, 10V | 4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 15 nC @ 10 V | 23 nC @ 10 V | 31 nC @ 10 V | 38 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V | 1600 pF @ 15 V | 2400 pF @ 15 V | 3200 pF @ 15 V | 3900 pF @ 15 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 68W (Tc) | 42W (Tc) | 56W (Tc) | 68W (Tc) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3 | PG-TO252-3-11 | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
