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| Part Number | IPC100N04S51R9ATMA1 | IPC100N04S5L1R9ATMA1 | IPC100N04S51R2ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | 100A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V | 4.5V, 10V | 7V, 10V | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V | 1.9mOhm @ 50A, 10V | 1.2mOhm @ 50A, 10V | 1.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 50µA | 2V @ 50µA | 3.4V @ 90µA | 3.4V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 81 nC @ 10 V | 131 nC @ 10 V | 83 nC @ 10 V |
| Vgs (Max) | ±20V | ±16V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V | 4310 pF @ 25 V | 7650 pF @ 25 V | 4810 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 100W (Tc) | 100W (Tc) | 150W (Tc) | 115W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8-34 | PG-TDSON-8-34 | PG-TDSON-8-34 | PG-TDSON-8-34 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
