IPC100N04S51R2ATMA1
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Infineon Technologies IPC100N04S51R2ATMA1

Manufacturer No:
IPC100N04S51R2ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPC100N04S51R2ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A 8TDSON-34
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:131 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-34
Package / Case:8-PowerTDFN
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$2.67
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Similar Products

Part Number IPC100N04S51R2ATMA1 IPC100N04S51R9ATMA1   IPC100N04S51R7ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.4V @ 90µA 3.4V @ 50µA 3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 131 nC @ 10 V 65 nC @ 10 V 83 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7650 pF @ 25 V 3770 pF @ 25 V 4810 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 100W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-34 PG-TDSON-8-34 PG-TDSON-8-34
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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