IPB80P04P4L04ATMA2
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Infineon Technologies IPB80P04P4L04ATMA2

Manufacturer No:
IPB80P04P4L04ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80P04P4L04ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 80A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:176 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:11570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$3.37
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Similar Products

Part Number IPB80P04P4L04ATMA2 IPB80P04P4L06ATMA2   IPB80P04P4L08ATMA2   IPB80P03P4L04ATMA2   IPB80P04P4L04ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Not For New Designs
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 80A, 10V 6.7mOhm @ 80A, 10V 8.2mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 150µA 2.2V @ 120µA 2V @ 253µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V 104 nC @ 10 V 92 nC @ 10 V 160 nC @ 10 V 176 nC @ 10 V
Vgs (Max) +5V, -16V +5V, -16V +5V, -16V +5V, -16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 11570 pF @ 25 V 6580 pF @ 25 V 5430 pF @ 25 V 11300 pF @ 25 V 3800 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 88W (Tc) 75W (Tc) 137W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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