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| Part Number | IPB80N06S4L05ATMA2 | IPB80N06S4L07ATMA2 | IPB80N06S405ATMA2 | IPB80N06S4L05ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 80A, 10V | 6.7mOhm @ 80A, 10V | 5.7mOhm @ 80A, 10V | 4.8mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA | 2.2V @ 40µA | 4V @ 60µA | 2.2V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 75 nC @ 10 V | 81 nC @ 10 V | 110 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V | ±20V | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V | 5680 pF @ 25 V | 6500 pF @ 25 V | 8180 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 107W (Tc) | 79W (Tc) | 107W (Tc) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
