IPB80N06S4L05ATMA1
  • Share:

Infineon Technologies IPB80N06S4L05ATMA1

Manufacturer No:
IPB80N06S4L05ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S4L05ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
17

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S4L05ATMA1 IPB80N06S4L05ATMA2   IPB80N06S4L07ATMA1   IPB80N06S2L05ATMA1   IPB80N06S405ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V 5.1mOhm @ 80A, 10V 6.4mOhm @ 80A, 10V 4.5mOhm @ 80A, 10V 5.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 60µA 2.2V @ 60µA 2.2V @ 40µA 2V @ 250µA 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V 75 nC @ 10 V 230 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8180 pF @ 25 V 8180 pF @ 25 V 5680 pF @ 25 V 5700 pF @ 25 V 6500 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 107W (Tc) 107W (Tc) 79W (Tc) 300W (Tc) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PMV48XPAR
PMV48XPAR
Nexperia USA Inc.
MOSFET P-CH 20V 3.5A TO236AB
SI1480DH-T1-GE3
SI1480DH-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 2.6A SC70-6
DMNH4011SK3Q-13
DMNH4011SK3Q-13
Diodes Incorporated
MOSFET N-CH 40V 50A TO252
NVMFWS020N06CT1G
NVMFWS020N06CT1G
onsemi
MOSFET N-CH 60V 9A/28A 5DFN
IXTA300N04T2
IXTA300N04T2
IXYS
MOSFET N-CH 40V 300A TO263
UJ4C075033B7S
UJ4C075033B7S
UnitedSiC
750V/33MOHM, N-OFF SIC CASCODE,
STF9NK60ZD
STF9NK60ZD
STMicroelectronics
MOSFET N-CH 600V 7A TO220FP
TPC8111(TE12L,Q,M)
TPC8111(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 11A 8SOP
IPD068N10N3GBTMA1
IPD068N10N3GBTMA1
Infineon Technologies
MOSFET N-CH 100V 90A TO252-3
IRFHM8329TRPBF
IRFHM8329TRPBF
Infineon Technologies
MOSFET N-CH 30V 16A/57A PQFN
PHP110NQ08T,127
PHP110NQ08T,127
NXP USA Inc.
MOSFET N-CH 75V 75A TO220AB
RSF015N06TL
RSF015N06TL
Rohm Semiconductor
MOSFET N-CH 60V 1.5A TUMT3

Related Product By Brand

AUIR3242SBOARDB2BTOBO1
AUIR3242SBOARDB2BTOBO1
Infineon Technologies
AUIR3242S BOARD B2B
BCR 116S E6727
BCR 116S E6727
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
IRLMS1902TRPBF
IRLMS1902TRPBF
Infineon Technologies
MOSFET N-CH 20V 3.2A MICRO6
64-2092PBF
64-2092PBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
IRFL024NPBF
IRFL024NPBF
Infineon Technologies
MOSFET N-CH 55V 2.8A SOT223
BSC072N025S G
BSC072N025S G
Infineon Technologies
MOSFET N-CH 25V 15A/40A TDSON
XC836M1FRIABFXUMA1
XC836M1FRIABFXUMA1
Infineon Technologies
IC MCU 8BIT 4KB FLASH 28TSSOP
PVD1354NS
PVD1354NS
Infineon Technologies
SSR RELAY SPST-NO 550MA 0-100V
CY9AFB42MBPMC-G-JNE2
CY9AFB42MBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 160KB FLASH 80LQFP
CY8C22213-24SIT
CY8C22213-24SIT
Infineon Technologies
IC MCU 8BIT 2KB FLASH 20SOIC
MB90F342ESPMC-G-JNE1
MB90F342ESPMC-G-JNE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100LQFP
S29GL128N11FFVR10
S29GL128N11FFVR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA