IPB80N06S3L-06
  • Share:

Infineon Technologies IPB80N06S3L-06

Manufacturer No:
IPB80N06S3L-06
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S3L-06 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:9417 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S3L-06 IPB80N06S3L-05  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 56A, 10V 4.5mOhm @ 69A, 10V
Vgs(th) (Max) @ Id 2.2V @ 80µA 2.2V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 273 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 9417 pF @ 25 V 13060 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 165W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IXTH96N20P
IXTH96N20P
IXYS
MOSFET N-CH 200V 96A TO247
FDB8896-F085
FDB8896-F085
Fairchild Semiconductor
19A, 30V, 0.0068OHM, N-CHANNEL,
IPI80N04S403AKSA1
IPI80N04S403AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO262-3
FDS8813NZ
FDS8813NZ
onsemi
MOSFET N-CH 30V 18.5A 8SOIC
IRFL110TR
IRFL110TR
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
IRFI624GPBF
IRFI624GPBF
Vishay Siliconix
MOSFET N-CH 250V 3.4A TO220-3
FQPF27N25T
FQPF27N25T
onsemi
MOSFET N-CH 250V 14A TO220F
SIE820DF-T1-E3
SIE820DF-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK
IRFR18N15DTRLP
IRFR18N15DTRLP
Infineon Technologies
MOSFET N-CH 150V 18A DPAK
NTD4858NA-1G
NTD4858NA-1G
onsemi
MOSFET N-CH 25V 11.2A/73A IPAK
SSM3K7002BSU,LF
SSM3K7002BSU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 200MA USM
QS5U21TR
QS5U21TR
Rohm Semiconductor
MOSFET P-CH 20V 1.5A TSMT5

Related Product By Brand

BAS7007WH6327XTSA1
BAS7007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT343
IRLZ44ZSTRLPBF
IRLZ44ZSTRLPBF
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
IPD60R280PFD7SAUMA1
IPD60R280PFD7SAUMA1
Infineon Technologies
MOSFET N-CH 650V 12A TO252-3
IPD70N03S4L04ATMA1
IPD70N03S4L04ATMA1
Infineon Technologies
MOSFET N-CH 30V 70A TO252-3
IRLI520NPBF
IRLI520NPBF
Infineon Technologies
MOSFET N-CH 100V 8.1A TO220AB FP
TLV49613MXTMA1
TLV49613MXTMA1
Infineon Technologies
MAGNETIC SWITCH LATCH SOT23-3
CY8CLED04D02-56LTXI
CY8CLED04D02-56LTXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 56VQFN
MB90548GSPMC-G-351-JNE1
MB90548GSPMC-G-351-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
S25FL512SDPMFIG11
S25FL512SDPMFIG11
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C1518KV18-300BZXC
CY7C1518KV18-300BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1440AV33-250AXC
CY7C1440AV33-250AXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 100TQFP
CY7C136E-25JXIT
CY7C136E-25JXIT
Infineon Technologies
IC SRAM 16KBIT PARALLEL 52PLCC