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| Part Number | IPB80N06S2L09ATMA2 | IPB80N06S209ATMA2 | IPB80N06S2L06ATMA2 | IPB80N06S2L09ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 52A, 10V | 8.8mOhm @ 50A, 10V | 6mOhm @ 69A, 10V | 8.2mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 125µA | 4V @ 125µA | 2V @ 180µA | 2V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | 80 nC @ 10 V | 150 nC @ 10 V | 105 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V | 2360 pF @ 25 V | 3800 pF @ 25 V | 2620 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 190W (Tc) | 190W (Tc) | 250W (Tc) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
