IPB80N06S2L07ATMA3
  • Share:

Infineon Technologies IPB80N06S2L07ATMA3

Manufacturer No:
IPB80N06S2L07ATMA3
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S2L07ATMA3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.44
80

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 60A, 10V 6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3160 pF @ 25 V 3160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

RJK03M8DNS-00#J5
RJK03M8DNS-00#J5
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8HWSON
IRFH5053TRPBF
IRFH5053TRPBF
Infineon Technologies
MOSFET N-CH 100V 9.3A/46A PQFN
MSC035SMA170B4
MSC035SMA170B4
Microchip Technology
MOSFET SIC 1700V 35 MOHM TO-247-
2N7002LT1G
2N7002LT1G
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FQB2P40TM
FQB2P40TM
Fairchild Semiconductor
MOSFET P-CH 400V 2A D2PAK
IRF740STRRPBF
IRF740STRRPBF
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
IXFA76N15T2-TRL
IXFA76N15T2-TRL
IXYS
MOSFET N-CH 150V 76A TO263
TPC8111(TE12L,Q,M)
TPC8111(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 11A 8SOP
MCH6341-TL-E
MCH6341-TL-E
onsemi
MOSFET P-CH 30V 5A 6MCPH
FDB8132_F085
FDB8132_F085
onsemi
MOSFET N-CH 30V 80A D2PAK
RJK0301DPB-WS#J0
RJK0301DPB-WS#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 60A 5LFPAK
MCU07N65-TP
MCU07N65-TP
Micro Commercial Co
MOSFET N-CH 650V 7A DPAK

Related Product By Brand

BCP54E6327
BCP54E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223
IRF7752TRPBF
IRF7752TRPBF
Infineon Technologies
MOSFET 2N-CH 30V 4.6A 8TSSOP
F3L300R12ME4B22BOSA1
F3L300R12ME4B22BOSA1
Infineon Technologies
IGBT MOD 1200V 450A 1550W
PVI1050
PVI1050
Infineon Technologies
IC ISO PHOTOVOLTC 5/10VOUT 8-DIP
CY27410LTXI-013
CY27410LTXI-013
Infineon Technologies
PREMIS SSCG EMI REDUCTION
CY25100SXC-056T
CY25100SXC-056T
Infineon Technologies
IC CLOCK GENERATOR
MB90561APMC-G-385-JNE1
MB90561APMC-G-385-JNE1
Infineon Technologies
IC MCU 16BIT 32KB MROM 64LQFP
FM28V020-SGTR
FM28V020-SGTR
Infineon Technologies
IC FRAM 256KBIT PARALLEL 28SOIC
S25FL512SAGMFVR10
S25FL512SAGMFVR10
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C025-25AXI
CY7C025-25AXI
Infineon Technologies
IC SRAM 128KBIT PARALLEL 100TQFP
CY7C12681KV18-450BZXC
CY7C12681KV18-450BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
MB3793-27APNF-G-JN-ER6E1
MB3793-27APNF-G-JN-ER6E1
Infineon Technologies
IC SUPERVISOR 1 CHANNEL 8SOP