IPB80N06S2L07ATMA3
  • Share:

Infineon Technologies IPB80N06S2L07ATMA3

Manufacturer No:
IPB80N06S2L07ATMA3
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S2L07ATMA3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.44
80

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 60A, 10V 6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3160 pF @ 25 V 3160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IRFP340
IRFP340
Harris Corporation
MOSFET N-CH 400V 11A TO247-3
FDB8442
FDB8442
Fairchild Semiconductor
MOSFET N-CH 40V 28A/80A TO263AB
IPI65R190C6XKSA1
IPI65R190C6XKSA1
Infineon Technologies
IPI65R190C6 - 650V-700V COOLMOS
STH240N75F3-2
STH240N75F3-2
STMicroelectronics
MOSFET N CH 75V 180A H2PAK-2
IPB100N12S305ATMA1
IPB100N12S305ATMA1
Infineon Technologies
MOSFET N-CH 120V 100A TO263-3
RM20N60LD
RM20N60LD
Rectron USA
MOSFET N-CHANNEL 60V 20A TO252-2
DMP2023UFDF-13
DMP2023UFDF-13
Diodes Incorporated
MOSFET P-CH 20V 7.6A 6UDFN
SI7374DP-T1-GE3
SI7374DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 24A PPAK SO-8
IXFT60N65X2HV
IXFT60N65X2HV
IXYS
MOSFET N-CH 650V 60A TO268HV
NTD4809N-1G
NTD4809N-1G
onsemi
MOSFET N-CH 30V 9.6A/58A IPAK
FDMS3016DC
FDMS3016DC
onsemi
MOSFET N-CH 30V 18A/49A DLCOOL56

Related Product By Brand

IRLR120NTRPBF
IRLR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
SPD30N03S2L-20
SPD30N03S2L-20
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
64-2042
64-2042
Infineon Technologies
MOSFET N-CH 40V 75A TO262
XMC1100Q024F0016ABXUMA1
XMC1100Q024F0016ABXUMA1
Infineon Technologies
IC MCU 32BIT 16KB FLASH 24VQFN
TLE94713ESXUMA1
TLE94713ESXUMA1
Infineon Technologies
IC TXRX CAN LITE SBC 2MBPS
TDA5200XUMA1
TDA5200XUMA1
Infineon Technologies
RF RX ASK 433MHZ/868MHZ 28TSSOP
CY9AF132KBPMC-G-SNE2
CY9AF132KBPMC-G-SNE2
Infineon Technologies
IC MCU 32BIT 128KB FLASH 48LQFP
CYWB0124AB4-BVXI
CYWB0124AB4-BVXI
Infineon Technologies
IC WEST BRIDGE ANTIOCH-TNTP
S25FS256SAGMFB003
S25FS256SAGMFB003
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
CY7C1383D-100AXC
CY7C1383D-100AXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
CY7C199C-20ZXIT
CY7C199C-20ZXIT
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
S34MS04G100BHI000
S34MS04G100BHI000
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA