IPB80N06S2H5ATMA2
  • Share:

Infineon Technologies IPB80N06S2H5ATMA2

Manufacturer No:
IPB80N06S2H5ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S2H5ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.88
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V 5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V 155 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V 4400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

MMBF1374T1
MMBF1374T1
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
NTHL019N65S3H
NTHL019N65S3H
onsemi
MOSFET N-CH 650V 75A TO247-3
DMN2230UQ-13
DMN2230UQ-13
Diodes Incorporated
MOSFET N-CH 20V 2A SOT23
STB10N60M2
STB10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A D2PAK
NVMFS4C01NT3G
NVMFS4C01NT3G
onsemi
MOSFET N-CH 30V 49A/319A 5DFN
IRFI620G
IRFI620G
Vishay Siliconix
MOSFET N-CH 200V 4.1A TO220-3
SI1013X-T1-E3
SI1013X-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 350MA SC89-3
2SK3342(TE16L1,NQ)
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 4.5A PW-MOLD
IPI60R250CPAKSA1
IPI60R250CPAKSA1
Infineon Technologies
MOSFET N-CH 650V 12A TO262-3
IXTT75N10
IXTT75N10
IXYS
MOSFET N-CH 100V 75A TO268
AOTF11C60PL
AOTF11C60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO220-3F
R6004KNX
R6004KNX
Rohm Semiconductor
MOSFET N-CH 600V 4A TO220FM

Related Product By Brand

EVALM3CM615PNTOBO1
EVALM3CM615PNTOBO1
Infineon Technologies
IMOTION CIPOS MINI IFCM15P60GD
DDB6U180N16RRPB37BPSA1
DDB6U180N16RRPB37BPSA1
Infineon Technologies
BRIDGE RECT 3P 1.6KV 50A ECONO2
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS70E6327
BAS70E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BSZ039N06NSATMA1
BSZ039N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 18A/40A TSDSON
SAK-TC299TF-128F300N BC
SAK-TC299TF-128F300N BC
Infineon Technologies
IC MICROCONTROLLER
ISO1H802G
ISO1H802G
Infineon Technologies
IC PWR DRIVER N-CHAN 1:8 DSO-36
MB90F867EPMC-G-JNE1
MB90F867EPMC-G-JNE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
CY7C65640A-LFXCT
CY7C65640A-LFXCT
Infineon Technologies
IC USB HUB CONTROLLER HS 56VQFN
CYP15G0403DXB-BGI
CYP15G0403DXB-BGI
Infineon Technologies
IC TELECOM INTERFACE 256BGA
S26KL512SDABHA020
S26KL512SDABHA020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 24FBGA
S25FL208K0RMFI041
S25FL208K0RMFI041
Infineon Technologies
IC FLASH 8MBIT SPI 76MHZ 8SOIC