IPB80N06S209ATMA1
  • Share:

Infineon Technologies IPB80N06S209ATMA1

Manufacturer No:
IPB80N06S209ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S209ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.56
219

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S209ATMA1 IPB80N06S209ATMA2   IPB80N06S2L09ATMA1   IPB80N06S205ATMA1   IPB80N06S207ATMA1   IPB80N06S208ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 50A, 10V 8.8mOhm @ 50A, 10V 8.2mOhm @ 52A, 10V 4.8mOhm @ 80A, 10V 6.3mOhm @ 68A, 10V 7.7mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 125µA 4V @ 125µA 2V @ 125µA 4V @ 250µA 4V @ 180µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V 105 nC @ 10 V 170 nC @ 10 V 110 nC @ 10 V 96 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2360 pF @ 25 V 2360 pF @ 25 V 2620 pF @ 25 V 5110 pF @ 25 V 3400 pF @ 25 V 2860 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 300W (Tc) 250W (Tc) 215W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
IRF7580MTRPBF
IRF7580MTRPBF
Infineon Technologies
MOSFET N-CH 60V 114A DIRECTFET
IPD70N10S3L12ATMA1
IPD70N10S3L12ATMA1
Infineon Technologies
MOSFET N-CH 100V 70A TO252-3
STF2N80K5
STF2N80K5
STMicroelectronics
MOSFET N-CH 800V 2A TO220FP
NX7002BKMB315
NX7002BKMB315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
RM8N650IP
RM8N650IP
Rectron USA
MOSFET N-CHANNEL 650V 8A TO251
IRF3610STRLPBF
IRF3610STRLPBF
Infineon Technologies
MOSFET N-CH 100V 103A D2PAK
APT30M19JVFR
APT30M19JVFR
Microchip Technology
MOSFET N-CH 300V 130A ISOTOP
FQP5N20
FQP5N20
onsemi
MOSFET N-CH 200V 4.5A TO220-3
SI7860DP-T1-GE3
SI7860DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 11A PPAK SO-8
NTMFS4826NET1G
NTMFS4826NET1G
onsemi
MOSFET N-CH 30V 9.5A/66A 5DFN
TK50E08K3,S1X(S
TK50E08K3,S1X(S
Toshiba Semiconductor and Storage
MOSFET N-CH 75V 50A TO220-3

Related Product By Brand

IPA60R190P6XKSA1
IPA60R190P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.2A TO220-FP
IPB60R099C7ATMA1
IPB60R099C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 22A TO263-3
SPB100N03S2L-03
SPB100N03S2L-03
Infineon Technologies
MOSFET N-CH 30V 100A TO263-3
SGW25N120FKSA1
SGW25N120FKSA1
Infineon Technologies
IGBT 1200V 46A 313W TO247-3
CY9BF321LQN-G-AVE2
CY9BF321LQN-G-AVE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 64QFN
CY8C5247LTI-089T
CY8C5247LTI-089T
Infineon Technologies
IC MCU 32BIT 128KB FLASH 68QFN
CY8C3866PVI-021T
CY8C3866PVI-021T
Infineon Technologies
IC MCU 8BIT 64KB FLASH 48SSOP
CY90347DASPFV-GS-731E1
CY90347DASPFV-GS-731E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90349CASPFV-GS-359E1
MB90349CASPFV-GS-359E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
S25FL256SAGMFIG00
S25FL256SAGMFIG00
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S29JL032J60TFI410
S29JL032J60TFI410
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48TSOP
CY90F867ASPFR-G-N9E1
CY90F867ASPFR-G-N9E1
Infineon Technologies
IC MCU AUTO 100QFP