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| Part Number | IPB80N06S208ATMA1 | IPB80N06S208ATMA2 | IPB80N06S209ATMA1 | IPB80N06S205ATMA1 | IPB80N06S207ATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Discontinued at Digi-Key | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 58A, 10V | 7.7mOhm @ 58A, 10V | 8.8mOhm @ 50A, 10V | 4.8mOhm @ 80A, 10V | 6.3mOhm @ 68A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA | 4V @ 150µA | 4V @ 125µA | 4V @ 250µA | 4V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V | 96 nC @ 10 V | 80 nC @ 10 V | 170 nC @ 10 V | 110 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V | 2860 pF @ 25 V | 2360 pF @ 25 V | 5110 pF @ 25 V | 3400 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 215W (Tc) | 215W (Tc) | 190W (Tc) | 300W (Tc) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
