IPB80N06S207ATMA1
  • Share:

Infineon Technologies IPB80N06S207ATMA1

Manufacturer No:
IPB80N06S207ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S207ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
374

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N06S207ATMA1 IPB80N08S207ATMA1   IPB80N06S207ATMA4   IPB80N06S208ATMA1   IPB80N06S209ATMA1   IPB80N06S2L07ATMA1   IPB80N06S407ATMA1   IPB80N06S205ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V 55 V 55 V 55 V 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 68A, 10V 7.1mOhm @ 80A, 10V 6.3mOhm @ 68A, 10V 7.7mOhm @ 58A, 10V 8.8mOhm @ 50A, 10V 6.7mOhm @ 60A, 10V 7.1mOhm @ 80A, 10V 4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA 4V @ 250µA 4V @ 180µA 4V @ 150µA 4V @ 125µA 2V @ 150µA 4V @ 40µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 180 nC @ 10 V 110 nC @ 10 V 96 nC @ 10 V 80 nC @ 10 V 130 nC @ 10 V 56 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V 4700 pF @ 25 V 3400 pF @ 25 V 2860 pF @ 25 V 2360 pF @ 25 V 3160 pF @ 25 V 4500 pF @ 25 V 5110 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 250W (Tc) 215W (Tc) 190W (Tc) 210W (Tc) 79W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

SPD15P10PLGBTMA1
SPD15P10PLGBTMA1
Infineon Technologies
MOSFET P-CH 100V 15A TO252-3
NVH4L020N120SC1
NVH4L020N120SC1
onsemi
SICFET N-CH 1200V 102A TO247
IPN60R2K0PFD7SATMA1
IPN60R2K0PFD7SATMA1
Infineon Technologies
MOSFET N-CH 650V 3A SOT223
SQJA72EP-T1_GE3
SQJA72EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 100V 37A PPAK SO-8
IPA057N08N3GXKSA1
IPA057N08N3GXKSA1
Infineon Technologies
MOSFET N-CH 80V 60A TO220-FP
SIR690DP-T1-GE3
SIR690DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 34.4A PPAK SO-8
STI28N60M2
STI28N60M2
STMicroelectronics
MOSFET N-CH 600V 22A I2PAK
IXFN24N100
IXFN24N100
IXYS
MOSFET N-CH 1KV 24A SOT-227B
IRF6797MTR1PBF
IRF6797MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 36A DIRECTFET
CSD25401Q3
CSD25401Q3
Texas Instruments
MOSFET P-CH 20V 14A/60A 8VSON
FDB3632-F085
FDB3632-F085
onsemi
MOSFET N-CH 100V 12A TO263AB
SCT4026DRC15
SCT4026DRC15
Rohm Semiconductor
750V, 26M, 4-PIN THD, TRENCH-STR

Related Product By Brand

ETT480N22P60HPSA1
ETT480N22P60HPSA1
Infineon Technologies
THYR / DIODE MODULE DK
BCR116SE6327
BCR116SE6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
IPI65R310CFDXKSA1700
IPI65R310CFDXKSA1700
Infineon Technologies
IPI65R310 - 650V AND 700V COOLMO
IRLHS2242TR2PBF
IRLHS2242TR2PBF
Infineon Technologies
MOSFET P-CH 20V 5.8A 2X2 PQFN
SAK-TC275TP-64F200N DC
SAK-TC275TP-64F200N DC
Infineon Technologies
IC MCU 32BIT 4MB FLASH 176LQFP
TLE4274D V33
TLE4274D V33
Infineon Technologies
IC REG LINEAR 3.3V 400MA TO252-3
MB90020PMT-GS-171-BND
MB90020PMT-GS-171-BND
Infineon Technologies
IC MCU 120LQFP
MB89191APF-G-116-ERE1
MB89191APF-G-116-ERE1
Infineon Technologies
IC MCU 8BIT 4KB MROM 28SOP
MB90349CASPFV-GS-502E1
MB90349CASPFV-GS-502E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB90548GSPMC-G-352E1
MB90548GSPMC-G-352E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CYWB0224ABS-BVXIT
CYWB0224ABS-BVXIT
Infineon Technologies
IC WEST BRIDGE HS-USB 100VFBGA
S25FL164K0XMFV013
S25FL164K0XMFV013
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8SOIC