IPB80N06S207ATMA1
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Infineon Technologies IPB80N06S207ATMA1

Manufacturer No:
IPB80N06S207ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N06S207ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB80N06S207ATMA1 IPB80N08S207ATMA1   IPB80N06S207ATMA4   IPB80N06S208ATMA1   IPB80N06S209ATMA1   IPB80N06S2L07ATMA1   IPB80N06S407ATMA1   IPB80N06S205ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V 55 V 55 V 55 V 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 68A, 10V 7.1mOhm @ 80A, 10V 6.3mOhm @ 68A, 10V 7.7mOhm @ 58A, 10V 8.8mOhm @ 50A, 10V 6.7mOhm @ 60A, 10V 7.1mOhm @ 80A, 10V 4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA 4V @ 250µA 4V @ 180µA 4V @ 150µA 4V @ 125µA 2V @ 150µA 4V @ 40µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 180 nC @ 10 V 110 nC @ 10 V 96 nC @ 10 V 80 nC @ 10 V 130 nC @ 10 V 56 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V 4700 pF @ 25 V 3400 pF @ 25 V 2860 pF @ 25 V 2360 pF @ 25 V 3160 pF @ 25 V 4500 pF @ 25 V 5110 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 250W (Tc) 215W (Tc) 190W (Tc) 210W (Tc) 79W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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