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| Part Number | IPB80N04S404ATMA1 | IPB80N04S4L04ATMA1 | IPB80N04S204ATMA1 | IPB80N04S304ATMA1 | IPB80N04S403ATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Discontinued at Digi-Key | Not For New Designs | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V | 4mOhm @ 80A, 10V | 3.4mOhm @ 80A, 10V | 3.8mOhm @ 80A, 10V | 3.3mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 35µA | 2.2V @ 35µA | 4V @ 250µA | 4V @ 90µA | 4V @ 53µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | 60 nC @ 10 V | 170 nC @ 10 V | 80 nC @ 10 V | 66 nC @ 10 V |
| Vgs (Max) | ±20V | +20V, -16V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 25 V | 4690 pF @ 25 V | 5300 pF @ 25 V | 5200 pF @ 25 V | 5260 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 71W (Tc) | 71W (Tc) | 300W (Tc) | 136W (Tc) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
