Infineon Technologies-IPB80N04S3-04 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:	80 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5200 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-1
Package / Case:	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Infineon Technologies IPB80N04S3-04