IPB80N04S204ATMA2
  • Share:

Infineon Technologies IPB80N04S204ATMA2

Manufacturer No:
IPB80N04S204ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB80N04S204ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.93
494

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB80N04S204ATMA2 IPB80N04S204ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 80A, 10V 3.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF6665TRPBF
IRF6665TRPBF
Infineon Technologies
MOSFET N-CH 100V 4.2A DIRECTFET
RF1S45N06LE
RF1S45N06LE
Harris Corporation
45A, 60V, 0.028OHM, N-CHANNEL,
TPH3R704PC,LQ
TPH3R704PC,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 82A 8SOP
ZXMP10A18KTC
ZXMP10A18KTC
Diodes Incorporated
MOSFET P-CH 100V 3.8A TO252-3
STD26NF10
STD26NF10
STMicroelectronics
MOSFET N-CH 100V 25A DPAK
RJK0330DPB-01#J0
RJK0330DPB-01#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 45A LFPAK
RJK0656DPB-00#J5
RJK0656DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 60V 40A LFPAK
AOTF12N50
AOTF12N50
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 12A TO220-3F
IRLI520NPBF
IRLI520NPBF
Infineon Technologies
MOSFET N-CH 100V 8.1A TO220AB FP
IPD65R1K4CFDBTMA1
IPD65R1K4CFDBTMA1
Infineon Technologies
MOSFET N-CH 650V 2.8A TO252-3
TSM7N90CZ C0G
TSM7N90CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 900V 7A TO220
DMP3018SFVQ-13
DMP3018SFVQ-13
Diodes Incorporated
MOSFET P-CH 30V 11A PWRDI3333

Related Product By Brand

BA895E6327
BA895E6327
Infineon Technologies
PIN DIODE
BFP193WE6327HTSA1
BFP193WE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT343-4
FF8MR12W2M1B11BOMA1
FF8MR12W2M1B11BOMA1
Infineon Technologies
MOSFET 2N-CH 1200V AG-EASY2BM-2
BSZ215CHXTMA1
BSZ215CHXTMA1
Infineon Technologies
MOSFET N/P-CH 20V 8TSDSON
BSP125L6327
BSP125L6327
Infineon Technologies
N-CHANNEL POWER MOSFET
BSC028N06NSSCATMA1
BSC028N06NSSCATMA1
Infineon Technologies
MOSFET N-CH 60V 100A TDSON
XMC4104Q48F128BAXUMA1
XMC4104Q48F128BAXUMA1
Infineon Technologies
IC MCU 32BIT 128KB FLASH 48VQFN
SAK-XE164KM-48F80L AA
SAK-XE164KM-48F80L AA
Infineon Technologies
IC MCU 16BIT 384KB FLASH 100LQFP
ICE2PCS03GXUMA1
ICE2PCS03GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 100KHZ 8DSO
IR3622AMPBF
IR3622AMPBF
Infineon Technologies
IC REG CTRLR BUCK 32MLPQ
MB90457SPMT-GS-163
MB90457SPMT-GS-163
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
CY96F647RBPMC-GS-UJE1
CY96F647RBPMC-GS-UJE1
Infineon Technologies
IC MCU 16BIT 416KB FLASH 100LQFP