IPB65R660CFDATMA1
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Infineon Technologies IPB65R660CFDATMA1

Manufacturer No:
IPB65R660CFDATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB65R660CFDATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:615 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB65R660CFDATMA1 IPB65R660CFDAATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V 660mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200µA 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 100 V 543 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 62.5W (Tc) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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