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| Part Number | IPB65R150CFDAATMA1 | IPB65R150CFDATMA1 | IPB65R190CFDAATMA1 | IPB65R110CFDAATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Not For New Designs | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) | 22.4A (Tc) | 17.5A (Tc) | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V | 150mOhm @ 9.3A, 10V | 190mOhm @ 7.3A, 10V | 110mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 900µA | 4.5V @ 900µA | 4.5V @ 700µA | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | 86 nC @ 10 V | 68 nC @ 10 V | 118 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V | 2340 pF @ 100 V | 1850 pF @ 100 V | 3240 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 195.3W (Tc) | 195.3W (Tc) | 151W (Tc) | 277.8W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
