IPB65R110CFDATMA1
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Infineon Technologies IPB65R110CFDATMA1

Manufacturer No:
IPB65R110CFDATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB65R110CFDATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 31.2A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):277.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB65R110CFDATMA1 IPB65R310CFDATMA1   IPB65R150CFDATMA1   IPB65R190CFDATMA1   IPB65R110CFDATMA2   IPB65R110CFD7ATMA1   IPB65R110CFDAATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc) 11.4A (Tc) 22.4A (Tc) 17.5A (Tc) 31.2A (Tc) 22A (Tc) 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V 310mOhm @ 4.4A, 10V 150mOhm @ 9.3A, 10V 190mOhm @ 7.3A, 10V 110mOhm @ 12.7A, 10V 110mOhm @ 9.7A, 10V 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA 4.5V @ 400µA 4.5V @ 900µA 4.5V @ 730µA 4.5V @ 1.3mA 4.5V @ 480µA 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V 41 nC @ 10 V 86 nC @ 10 V 68 nC @ 10 V 118 nC @ 10 V 41 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V 1100 pF @ 100 V 2340 pF @ 100 V 1850 pF @ 100 V 3240 pF @ 100 V 1942 pF @ 400 V 3240 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 277.8W (Tc) 104.2W (Tc) 195.3W (Tc) 151W (Tc) 277.8W (Tc) 114W (Tc) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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