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| Part Number | IPB65R095C7ATMA1 | IPB65R095C7ATMA2 | IPB65R045C7ATMA1 | IPB65R065C7ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Discontinued at Digi-Key | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | 650 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) | 24A (Tc) | 46A (Tc) | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 11.8A, 10V | 95mOhm @ 11.8A, 10V | 45mOhm @ 24.9A, 10V | 600mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 590µA | 4V @ 590µA | 4V @ 1.25mA | 4.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 45 nC @ 10 V | 93 nC @ 10 V | 12 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 400 V | 2140 pF @ 400 V | 4340 pF @ 400 V | 557 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 128W (Tc) | 128W (Tc) | 227W (Tc) | 171W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
