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| Part Number | IPB60R280P6ATMA1 | IPB60R280P7ATMA1 | IPB60R380P6ATMA1 | IPB60R230P6ATMA1 | IPB60R280C6ATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) | 12A (Tc) | 10.6A (Tc) | 16.8A (Tc) | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5.2A, 10V | 280mOhm @ 3.8A, 10V | 380mOhm @ 3.8A, 10V | 230mOhm @ 6.4A, 10V | 280mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 430µA | 4V @ 190µA | 4.5V @ 320µA | 4.5V @ 530µA | 3.5V @ 430µA |
| Gate Charge (Qg) (Max) @ Vgs | 25.5 nC @ 10 V | 18 nC @ 10 V | 19 nC @ 10 V | 31 nC @ 10 V | 43 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V | 761 pF @ 400 V | 877 pF @ 100 V | 1450 pF @ 100 V | 950 pF @ 100 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 104W (Tc) | 53W (Tc) | 83W (Tc) | 126W (Tc) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3-1 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
