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| Part Number | IPB60R280C6ATMA1 | IPB60R380C6ATMA1 | IPB60R280P6ATMA1 | IPB65R280C6ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Not For New Designs | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) | 10.6A (Tc) | 13.8A (Tc) | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V | 380mOhm @ 3.8A, 10V | 280mOhm @ 5.2A, 10V | 280mOhm @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA | 3.5V @ 320µA | 4.5V @ 430µA | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | 32 nC @ 10 V | 25.5 nC @ 10 V | 45 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V | 700 pF @ 100 V | 1190 pF @ 100 V | 950 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 104W (Tc) | 83W (Tc) | 104W (Tc) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
