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| Part Number | IPB60R190C6ATMA1 | IPB65R190C6ATMA1 | IPB60R190P6ATMA1 | IPB60R160C6ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Obsolete | Obsolete | Not For New Designs |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 650 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | 20.2A (Tc) | 20.2A (Tc) | 23.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V | 190mOhm @ 7.3A, 10V | 190mOhm @ 7.6A, 10V | 160mOhm @ 11.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA | 3.5V @ 730µA | 4.5V @ 630µA | 3.5V @ 750µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 73 nC @ 10 V | 37 nC @ 10 V | 75 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V | 1620 pF @ 100 V | 1750 pF @ 100 V | 1660 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 151W (Tc) | 151W (Tc) | 151W (Tc) | 176W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
