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| Part Number | IPB60R125CPATMA1 | IPB60R165CPATMA1 | IPB60R125C6ATMA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Not For New Designs | Not For New Designs |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | 21A (Tc) | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V | 165mOhm @ 12A, 10V | 125mOhm @ 14.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA | 3.5V @ 790µA | 3.5V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 52 nC @ 10 V | 96 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V | 2000 pF @ 100 V | 2127 pF @ 100 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 208W (Tc) | 192W (Tc) | 219W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
