IPB60R099CPATMA1
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Infineon Technologies IPB60R099CPATMA1

Manufacturer No:
IPB60R099CPATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB60R099CPATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 31A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):255W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB60R099CPATMA1 IPB60R199CPATMA1   IPB60R299CPATMA1   IPB60R099C6ATMA1   IPB60R099C7ATMA1   IPB60R099CPAATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Obsolete Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 16A (Tc) 11A (Tc) 37.9A (Tc) 22A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 18A, 10V 199mOhm @ 9.9A, 10V 299mOhm @ 6.6A, 10V 99mOhm @ 18.1A, 10V 99mOhm @ 9.7A, 10V 105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA 3.5V @ 660µA 3.5V @ 440µA 3.5V @ 1.21mA 4V @ 490µA 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 43 nC @ 10 V 29 nC @ 10 V 119 nC @ 10 V 42 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V 1520 pF @ 100 V 1100 pF @ 100 V 2660 pF @ 100 V 1819 pF @ 400 V 2800 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 255W (Tc) 139W (Tc) 96W (Tc) 278W (Tc) 110W (Tc) 255W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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