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| Part Number | IPB60R099C7ATMA1 | IPB60R099CPATMA1 | IPB60R099P7ATMA1 | IPB60R099C6ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Not For New Designs | Active | Not For New Designs |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 600 V | 650 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | 31A (Tc) | 31A (Tc) | 37.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 9.7A, 10V | 99mOhm @ 18A, 10V | 99mOhm @ 10.5A, 10V | 99mOhm @ 18.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 490µA | 3.5V @ 1.2mA | 4V @ 530µA | 3.5V @ 1.21mA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | 80 nC @ 10 V | 45 nC @ 10 V | 119 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1819 pF @ 400 V | 2800 pF @ 100 V | 1952 pF @ 400 V | 2660 pF @ 100 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 110W (Tc) | 255W (Tc) | 117W (Tc) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
