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| Part Number | IPB60R070CFD7ATMA1 | IPB60R090CFD7ATMA1 | IPB60R170CFD7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | 600 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) | 25A (Tc) | 14A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 15.1A, 10V | 90mOhm @ 11.4A, 10V | 170mOhm @ 6A, 10V | 40mOhm @ 24.9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 760µA | 4.5V @ 570µA | 4.5V @ 300µA | 4.5V @ 1.25mA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | 51 nC @ 10 V | 28 nC @ 10 V | 108 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2721 pF @ 400 V | 2103 pF @ 400 V | 1190 pF @ 400 V | 4351 pF @ 400 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 156W (Tc) | 124W (Tc) | 75W (Tc) | 227W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
